1.75 µm strained InGaAs multiquantum well laser grown on InAs0.08P0.92 ternary substrate-Reference-Cited by-同舟云学术

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1.75 µm strained InGaAs multiquantum well laser grown on InAs0.08P0.92 ternary substrate

Published:1995-02-02 Issue:3 Volume:31 Page:188-189
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Menna R.J.,Olsen G.H.,Garbuzov D.,Bonner W.A.,Paff R.,Vermaak J.S.,Martinelli R.U.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19950105?crawler=true&mimetype=application/pdf

Reference13 articles.

1. InGaAs/InGaAsp/InP strained-layer quantum well lasers at ~2 μm

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-V MIXED CRYSTALS;Compound Semiconductor Bulk Materials and Characterizations;2012-12

2. Bulk Ternary Semiconducting Compounds;Encyclopedia of Materials: Science and Technology;2001

3. Strain relaxation in InGaAs lattice engineered substrates;Journal of Electronic Materials;2000-07

4. Strain relaxation of InxGa1−xAs during lateral oxidation of underlying AlAs layers;Applied Physics Letters;1999-10-11

5. Efficient 2.0–2.6 μm wavelength photoluminescence from narrow bandgap InAsP/InGaAs double heterostructures grown on InP substrates;Journal of Electronic Materials;1996-09

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