Diode lasers emitting at 3 [micro sign]m with 300 mW of continuous-wave output power
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2009.1827?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Continuous-wave room temperature operated 3.0μm type I GaSb-based lasers with quinternary AlInGaAsSb barriers
2. Room-temperature operation of 3.26μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers
3. Refractive indices of AlSb and GaSb‐lattice‐matched AlxGa1−xAsySb1−yin the transparent wavelength region
4. Below bandgap optical absorption in tellurium-doped GaSb
5. Very low transparency currents in double quantum well InGaAs semiconductor lasers with δ-doped resonant tunneling
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