Threshold reduction of 1.3 μm GaInAsP/InP surface emitting laser by a maskless circular planar buried heterostructure regrowth
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19930224?crawler=true&mimetype=application/pdf
Reference8 articles.
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Single‐Mode VCSELs for Communications Applications;VCSEL Industry;2021-11-24
2. III: Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers;Progress in Optics;1998
3. Gas-source molecular-beam epitaxy and optical characterisation of highly-reflective InGaAsP/InP multilayer Bragg mirrors for 1.3 [micro sign]m vertical-cavity lasers;Electronics Letters;1997
4. InP/InGaAs resonant cavity enhanced photodetector and light emitting diode with external mirrors on Si;Electronics Letters;1994-09-01
5. Continuous Wave GaInAsP/InP Surface Emitting Lasers with a Thermally Conductive MgO/Si Mirror;Japanese Journal of Applied Physics;1994-04-15
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