InP/InGaAs resonant cavity enhanced photodetector and light emitting diode with external mirrors on Si
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941057?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Surface emitting semiconductor lasers
2. Resonant cavity-enhanced (RCE) photodetectors
3. Room temperature photopumped 1.5 μm quantum well surface emitting lasers with InGaAsP/InP distributed Bragg reflectors
4. Room temperature pulsed operation of 1.5 mu m GaInAsP/InP vertical-cavity surface-emitting laser
5. Threshold reduction of 1.3 μm GaInAsP/InP surface emitting laser by a maskless circular planar buried heterostructure regrowth
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3. Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors;Applied Physics Letters;2005-01-17
4. Transfer of InP epilayers by wafer bonding;Journal of Crystal Growth;2004-08
5. Fabrication of 1.55-<tex>$mu$</tex>m Si-Based Resonant Cavity Enhanced Photodetectors Using Sol-Gel Bonding;IEEE Photonics Technology Letters;2004-08
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