E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer
Author:
Affiliation:
1. Institute for Nano Quantum Information Electronics 4‐6‐1 Komaba Meguro‐ku Tokyo Japan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/ell2.12189
Reference13 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Quantum dot lasers for silicon photonics [Invited]
3. Electrically pumped continuous-wave III–V quantum dot lasers on silicon
4. Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-µm P-Doped Quantum-Dot Lasers without Current Adjustments
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