Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200 GHz
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19980963?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Enhanced performance in GaAs TUNNETT diode oscillators above 100 GHz through diamond heat sinking and power combining
2. Frequency multipliers for millimeter and submillimeter wavelengths
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Active two-terminal devices as sources at THz frequencies: concepts, performance, and trends;SPIE Proceedings;2006-03-01
2. Generation of Submillimeter-Wave Radiation with GaAs Tunnett Diodes and InP Gunn Devices in a Second or Higher Harmonic Mode;International Journal of Infrared and Millimeter Waves;2005-01
3. Submillimeter-Wave InP Gunn Devices;IEEE Transactions on Microwave Theory and Techniques;2004-10
4. Two-Terminal Active Devices for Terahertz Sources;International Journal of High Speed Electronics and Systems;2003-06
5. 240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy;IEEE Transactions on Electron Devices;2003-04
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