Generation of Submillimeter-Wave Radiation with GaAs Tunnett Diodes and InP Gunn Devices in a Second or Higher Harmonic Mode-Reference-Cited by-同舟云学术

Generation of Submillimeter-Wave Radiation with GaAs Tunnett Diodes and InP Gunn Devices in a Second or Higher Harmonic Mode

Published:2005-01 Issue:1 Volume:26 Page:1-14
ISSN:0195-9271
Container-title:International Journal of Infrared and Millimeter Waves
language:en
Short-container-title:Int J Infrared Milli Waves

Author:

Eisele H.,Naftaly M.,Kamoua R.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation

Link

http://link.springer.com/content/pdf/10.1007/s10762-004-2027-4.pdf

Reference21 articles.

1. [1] P. Siegel, ?Terahertz technology,? IEEE Trans. Microwave Theory Tech., vol. 50, no. 3, pp. 910?928, March 2002.

2. [2] P. P?otka, J-i. Nishizawa, T. Kurabayashi, and H. Makabe, ?240?325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy,? IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 867?873, April 2003.

3. [3] P. P?otka, J-i. Nishizawa, T. Kurabayashi, and H. Makabe, ?GaAs fundamental-mode CW TUNNETT oscillators for THz-band applications,? 11th Int. Conf. Terahertz Electronics, Sendai, Japan, Sept. 24?26, 2003, p. 38.

4. [4] H. Eisele and R. Kamoua, ?Gunn Devices as Compact Low-Noise High-Performance Submillimeter-Wave Sources: Current Status and Future Potential,? 3rd ESA Workshop on Millimetre Wave Technology and Applications, Espoo, Finland, May 21?23, 2003, pp. 149?154.

5. [5] H. Eisele, A. Rydberg, and G. I. Haddad, ?Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100?300-GHz frequency range and above,? IEEE Trans. Microwave Theory Techniques, vol. 48, no. 4, pp. 626?631, April 2000.

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