Author:
Ólafsson H.Ö.,Gudjónsson G.,Allerstam F.,Sveinbjörnsson E.Ö.,Rödle T.,Jos R.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference6 articles.
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4. High field effect mobility in Si face 4H-SiC MOSFET transistors
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