Negative differential conductance due to resonant tunnelling through SiO2/single-crystalline-Si double barrier structure
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20010817?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Resonant tunneling in semiconductor double barriers
2. Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs‐GaAs‐AlxGa1−xAs double barrier structures
3. Electron resonant tunneling in Si/SiGe double barrier diodes
4. Resonant tunneling through amorphous silicon–silicon nitride double-barrier structures
5. Fabrication of Novel Si Double-Barrier Structures and Their Characteristics
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1. Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes;Applied Physics Letters;2016-02-29
2. Resonant tunneling properties of SiO2/polycrystalline Si/SiO2 multilayers fabricated by radio-frequency magnetron sputtering;Journal of Applied Physics;2015-09-14
3. Effect of resonant tunneling on electroluminescence in nc-Si/SiO 2 multilayers-based p-i-n structure;Thin Solid Films;2015-02
4. Resonant tunneling with high peak to valley current ratio in SiO2/nc-Si/SiO2 multi-layers at room temperature;Journal of Applied Physics;2014-01-28
5. Formation of ultrathin silicon layers by PECVD and their modification for nanoelectronic and nanophotonic applications;SPIE Proceedings;2013-07-25
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