Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes-Reference-Cited by-同舟云学术

Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes

Published:2016-02-29 Issue:9 Volume:108 Page:093502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tabe Michiharu¹,Tan Hoang Nhat¹,Mizuno Takeshi¹,Muruganathan Manoharan²,Anh Le The²^ORCID,Mizuta Hiroshi²³,Nuryadi Ratno¹⁴,Moraru Daniel¹⁵^ORCID

Affiliation:

1. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

2. School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi 923-1292, Japan

3. Nanoelectronics and Nanotechnologies Research Group, Faculty of Physical Sciences and Engineering, University of Southampton, High field, Southampton SO17 1BJ, United Kingdom

4. Center for Materials Technology, Agency for the Assessment and Application of Technology, South Tangerang, Indonesia

5. Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan

Funder

Research Institute of Electronics, Shizuoka University

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference34 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. A new device using the tunneling process in narrow p-n junctions

3. Direct Observation of Phonons During Tunneling in Narrow Junction Diodes

4. Phonon-Assisted Tunneling in Silicon and Germanium Esaki Junctions

5. Excess Tunnel Current in Silicon Esaki Junctions

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