Insights into carrier recombination processes in 1.3 [micro sign]m GaInNAs-based semiconductor lasers attained using high pressure-Reference-Cited by-同舟云学术

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Insights into carrier recombination processes in 1.3 [micro sign]m GaInNAs-based semiconductor lasers attained using high pressure

Published:2001 Issue:2 Volume:37 Page:92
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Fehse R.,Sweeney S.J.,Adams A.R.,O'Reilly E.P.,Egorov A.Y.,Riechert H.,Illek S.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20010049?crawler=true&mimetype=application/pdf

Reference9 articles.

1. Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes

2. Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers

3. A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K

4. The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers

5. Adams, A.R., Silver, M., and Allam, J.: ‘Semiconductor optoelectronic devices’, High pressure in semiconductor physics II, (Academic Press New York 1998),55, p. 301–352

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1. Optical properties of InGaN-based LEDs investigated using high hydrostatic pressure dependent techniques;physica status solidi (b);2013-03-26

2. MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices;Quantum Sensing and Nanophotonic Devices VIII;2011-01-22

3. 1.3 µm GaInNAs Bandgap Difference Confinement Semiconductor Optical Amplifiers;Japanese Journal of Applied Physics;2006-03-08

4. On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers;IEEE Journal of Selected Topics in Quantum Electronics;2005-09

5. OMVPE-grown GaInNAs lasers and SOAs operating at 1.3 μm region;SPIE Proceedings;2005-01-31

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