He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications-Reference-Cited by-同舟云学术

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He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications

Published:2001 Issue:12 Volume:37 Page:788
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Ting Shyh-Fann,Fang Yean-Kuen,Chen Chien-Hao,Yang Chih-Wei,Yu Mo-Chiun,Jang Syun-Ming,Yu Chen-Hua,Liang Mong-Song,Chen Sunway,Shih R.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20010515?crawler=true&mimetype=application/pdf

Reference5 articles.

1. Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface characterization of nitrogen plasma-treated gate oxide film formed by RTP technology;Surface and Interface Analysis;2014-08-07

2. Study of Retention Characteristics and Program Speed Enhancement Using Plasma Nitridation on Interpoly Dielectric;Journal of The Electrochemical Society;2010

3. Effect of repetition of plasma nitride oxide integration;Thin Solid Films;2006-12

4. Improving reactive ion etching selectivity of GaAs/AlGaAs with He plus;Materials Science in Semiconductor Processing;2004-02

5. High performance 12 GHz enhancement-mode pseudomorphic HEMT prepared by He plus reactive ion etching;Solid-State Electronics;2003-04

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