Multiple current amplifier‐based gate driving for parallel operation of discrete SiC MOSFETs
Author:
Affiliation:
1. Applied Electronic Research Team University of the Basque Country Bilbao Spain
Funder
Ministerio de Ciencia e Innovación
Eusko Jaurlaritza
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12232
Reference33 articles.
1. Silicon carbide turns on its power
2. Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated
3. IEEE ITRW Working Group Position Paper-System Integration and Application: Silicon Carbide: A Roadmap for Silicon Carbide Adoption in Power Conversion Applications
4. Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview
5. Fundamentals of Silicon Carbide Technology
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