Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design
Author:
Affiliation:
1. CRRC Zhuzhou Institute Co. Ltd Zhuzhou Hunan People's Republic of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12280
Reference26 articles.
1. Characterization of a 3.3-kV Si-SiC Hybrid Power Module in Half-Bridge Topology for Traction Inverter Application
2. Characteristics of 600, 1200, and 3300 V Planar SiC-MOSFETs for Energy Conversion Applications
3. Ishikawa K. Yukutake S. Kono Y. Ogawa K. Kameshiro N.:Traction inverter that applies compact 3.3 kV /1200 A SiC hybrid module. In:2014 International Power Electronics Conference (IPEC‐Hiroshima 2014 ‐ ECCE ASIA) pp.2140–2144(2014)
4. Rujas A. M‐Lopez V. Villar I. Nieva T. Larzabal I.:SiC‐hybrid based railway inverter for metro application with 3.3kV low inductance power modules. In:2019 IEEE Energy Conversion Congress and Exposition (ECCE) pp.1992–1997(2019)
5. Makishima S. Fujimoto K. Kondo K.:The direct benefit of SiC power semiconductor devices for railway vehicle traction inverters. In:2018 International Power Electronics Conference (IPEC‐Niigata 2018 ‐ECCE Asia) pp.2047–2050(2018).
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1. Life-cycle energy demand comparison of medium voltage Silicon IGBT and Silicon Carbide MOSFET power semiconductor modules in railway traction applications;Power Electronic Devices and Components;2023-10
2. Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide;Japanese Journal of Applied Physics;2023-01-01
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