Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm-Reference-Cited by-同舟云学术

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Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm

Published:2000-06-01 Issue:3 Volume:147 Page:172-176
ISSN:1350-2433
Container-title:IEE Proceedings - Optoelectronics
language:en
Short-container-title:

Author:

Vicet A.,Alibert C.,Rouillard Y.,Nicolas J.-C.,Skouri E.M.,Baranov A.N.,Genty F.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Atomic and Molecular Physics, and Optics

Link

https://digital-library.theiet.org/content/journals/10.1049/ip-opt_20000298?crawler=true&mimetype=application/pdf

Reference16 articles.

1. SCHIFF, H.I., MACKAY, G.I., BECHARA, J., and SIGRIST, M.K.: ‘The use of tunable diode laser absorption spectroscopy for atmospheric measurements’, Air monitoring by spectroscopic techniques, Chemical analysis series 1994),127,

2. NADEZHDINSKII, A.I., and PROKHOROV, A.M.: ‘Modern trends in diode laser spectroscopy’, Tunable Diode Laser Applications SPIE, 1992),1724,

3. Physics and applications of IV-VI compound semiconductor lasers

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