Author:
Reuscher G.,Landwehr G.,Keim M.,Lugauer H.-J.,Fischer F.,Waag A.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference11 articles.
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3. Resonant electron tunneling in ZnSe/BeTe double‐barrier, single‐quantum‐well heterostructures
4. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
5. p-Type doping of beryllium chalcogenides grown by molecular beam epitaxy
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