Piezoresistive properties of 3C-SiC films anodically bonded to aluminosilicate glass substrates
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20000463?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Choyke, W.J., Matsunami, H., Pensl, G., ‘Silicon carbide’, (Akademie Verlag 1997)
2. Crystallinity and Photoluminescence in Stain‐Etched Porous Si
3. Effect of Anodic Bonding Temperature on Mechanical Distortion of SiC X-Ray Mask Substrate
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Introduction and Literature Review;Piezoresistive Effect of p-Type Single Crystalline 3C-SiC;2017
2. The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review;Journal of Microelectromechanical Systems;2015-12
3. Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering;Materials Science Forum;2011-03
4. Piezoresistivity in Silicon Carbide Fibers;Journal of Electroceramics;2003-07
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