Investigation of RF and linearity performance of electrode work‐function engineered HDB vertical TFET-Reference-Cited by-同舟云学术

Investigation of RF and linearity performance of electrode work‐function engineered HDB vertical TFET

Published:2019-01 Issue:1 Volume:14 Page:17-21
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Narwal Seema¹^ORCID,Chauhan Sudakar Singh¹^ORCID

Affiliation:

1. Department of Electronics & Communication EngineeringNational Institute of TechnologyKurukshetraHaryana136119India

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2018.5307

Reference27 articles.

1. Linearity and Analog Performance Realization of Energy-Efficient TFET-Based Architectures: An Optimization for RFIC Design

2. Effect of gate-length downscaling on the analog/RF and linearity performance of InAs-based nanowire tunnel FET

3. Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET;Dash S.;Int. J. Numer. Model., Electron. Netw. Devices Fields,2017

4. Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

5. Tunnel field-effect transistors as energy-efficient electronic switches

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