Vacuum‐free fabrication of a low‐voltage multi‐bit memory device based on a ferroelectric polymer and photosensitive film-Reference-Cited by-同舟云学术

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Vacuum‐free fabrication of a low‐voltage multi‐bit memory device based on a ferroelectric polymer and photosensitive film

Published:2019-02 Issue:2 Volume:14 Page:202-205
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Kim Woo Young¹

Affiliation:

1. Department of Electronic EngineeringJeju National University102 Jejudaehak‐roJeju‐siJeju Special Self‐Governing Province63243Republic of Korea

Funder

Jeju National University

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2018.5414

Reference15 articles.

1. Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

2. Flexible NAND-Like Organic Ferroelectric Memory Array

3. Organic ferroelectric memory devices with inkjet-printed polymer electrodes on flexible substrates

4. Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor

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