Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,General Computer Science,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Lanthanum-substituted bismuth titanate for use in non-volatile memories
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4. Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
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