Interface quality of SiGe oxide prepared by RF plasma anodisation
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941315?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Oxidation studies of SiGe
2. Growth and properties of thin SiO2films by inductively coupled low-temperature plasma anodisation
3. Kennedy, G.P.: ‘Gate dielectric for ULSI produced by plasma anodisation’, 1992, PhD, Liverpool
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