Ion implantation in semiconductor device technology-Reference-Cited by-同舟云学术

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Ion implantation in semiconductor device technology

Published:1972 Issue:6 Volume:42 Page:265
ISSN:0033-7722
Container-title:Radio and Electronic Engineer
language:en
Short-container-title:Radio Electron. Eng. UK

Author:

Stephen J.

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering,General Medicine

Link

https://digital-library.theiet.org/content/journals/10.1049/ree.1972.0044?crawler=true&mimetype=application/pdf

Reference88 articles.

1. Shockley, W.: ‘Forming semiconductive devices by ionic bombardment’, (2,787,564)

2. ‘High energy implantation of materials’, Scientific Report, AD635267, May, 1966 No. 1 (Ion Physics Corp.)

3. ‘High energy ion implantation of materials’, Final Report, AD651313, January, 1967 Ion Physics Corp.

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The development of ion implantation technology in the UK semiconductor industry;Physics in Technology;1985-07

2. Ion implantation for semiconductor processing;Radiation Effects;1982-01

3. Ion Implantation Processes in Silicon;Impurity Doping Processes in Silicon;1981

4. The physics of excess electron velocity in submicron‐channel FET’s;Journal of Applied Physics;1977-11

5. Low-noise photon-counting system using the photosil detector;Journal of Physics E: Scientific Instruments;1977-05

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