Influence of central valley effective mass and alloy scattering on transient drift velocity in Ga1−xInxP1−yAsy-Reference-Cited by-同舟云学术

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Influence of central valley effective mass and alloy scattering on transient drift velocity in Ga1−xInxP1−yAsy

Published:1979 Issue:19 Volume:15 Page:586
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Littlejohn M.A.,Arledge L.A.,Glisson T.H.,Hauser J.R.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19790422?crawler=true&mimetype=application/pdf

Reference16 articles.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Backside Pulse Doped Channel Heterostructure Field-Effect Transistor: Design, DC, and RF Performance;Japanese Journal of Applied Physics;1993-01-15

2. Two-dimensional Monte Carlo simulation of a submicron GaAs MESFET with a nonuniformly doped channel;Solid-State Electronics;1985-11

3. Hot‐electron velocity overshoot in Ga0.47In0.53As;Applied Physics Letters;1984-04-15

4. Ballistic transport and velocity overshoot in semiconductors: Part I—Uniform field effects;IEEE Transactions on Electron Devices;1983-02

5. Electron transport in planar-doped barrier structures using an ensemble Monte Carlo method;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1983

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