Electron transport in planar-doped barrier structures using an ensemble Monte Carlo method
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Published:1983
Issue:2
Volume:1
Page:449
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
21 articles.
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1. Role of hot carriers in the interfacial transport in amorphous silicon/crystalline silicon heterostructure solar cells;physica status solidi (a);2012-11-19
2. Monte Carlo Analysis;Encyclopedia of RF and Microwave Engineering;2005-04-15
3. Monte Carlo Analysis;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27
4. Introduction;Semiconductor Device Physics and Simulation;1998
5. Efficient ohmic boundary conditions for the Monte Carlo simulation of electron transport;IEEE Transactions on Electron Devices;1994-04