High-quality 1.3 [micro sign]m GaInNAs single quantum well lasers grown by MBE
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20046557?crawler=true&mimetype=application/pdf
Reference8 articles.
1. GaInNAs: a novel material for long-wavelength semiconductor lasers
2. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m
3. Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy
4. Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m
5. Gradient direction similarity measure
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1. Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs;Crystal Growth & Design;2021-02-23
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3. Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells;Journal of Applied Physics;2015-10-28
4. The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers;Applied Physics Letters;2013-01-28
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