Evaluation of effective electron velocity in AlGaN/GaN HEMTs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20001193?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions
2. Microwave performance of AlGaN/GaN inverted MODFET's
3. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
4. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
5. Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
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2. Temperature dependence of the local electronic properties of n-type GaN crystals by micro-Raman spectroscopy and dielectric dispersion at high temperatures;Japanese Journal of Applied Physics;2021-03-23
3. Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts;Solid-State Electronics;2016-08
4. First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors;Japanese Journal of Applied Physics;2013-12-01
5. Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation;Solid-State Electronics;2013-11
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