Evaluation of single ohmic metallisations for contacting both p- and n-type GaInAs-Reference-Cited by-同舟云学术

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Evaluation of single ohmic metallisations for contacting both p- and n-type GaInAs

Published:1990 Issue:15 Volume:26 Page:1127
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Shantharama L.G.,Schumacher H.,Leblanc H.P.,Esagui R.,Bhat R.,Koza M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19900729?crawler=true&mimetype=application/pdf

Reference11 articles.

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal–insulator–metal waveguides with lateral electrical pumping;Optical and Quantum Electronics;2021-03-20

2. Electrically pumped dielectric loaded surface plasmon waveguides;Optics Communications;2020-05

3. AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3μm grown by MOVPE on InP substrate;Journal of Crystal Growth;2013-05

4. Silicon fab-compatible contacts to n-InP and p-InGaAs for photonic applications;Applied Physics Letters;2012-05-14

5. Metallic and Plasmonic Nanolasers;Advances in Semiconductor Lasers;2012

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