Two-wavelength disordered quantum-well photodetector
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19880120?crawler=true&mimetype=application/pdf
Reference7 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Monolithic integration of optical waveguide circuitry with III-V photodetectors for advanced lightwave receivers;Journal of Lightwave Technology;1993
2. Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing;Semiconductor Science and Technology;1992-06-01
3. Tunable (Al)GaAs lasers using impurity‐free partial interdiffusion;Journal of Applied Physics;1992-01-15
4. Selective interdiffusion of GaInAs/AlInAs quantum wells by SiO2encapsulation and rapid thermal annealing;Journal of Applied Physics;1990-11-15
5. Two‐wavelength demultiplexingp‐i‐nGaAs/AlAs photodetector using partially disordered multiple quantum well structures;Applied Physics Letters;1989-08-28
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