0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHz
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19880247?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Camnitz, L.H., Tasker, P.J., Lee, H., van der Merwe, D., and Eastman, L.F.: IEDM Tech. Dig., 1984), p. 360–363
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