Self-aligned AlGaN/GaN high electron mobility transistors with 0.18 [micro sign]m gate-length
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20082040?crawler=true&mimetype=application/pdf
Reference11 articles.
1. 30-W/mm GaN HEMTs by Field Plate Optimization
2. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
3. 10-W/mm AlGaN-GaN HFET with a field modulating plate
4. GaN: Processing, defects, and devices
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