Method for determination of capture velocity of charge carriers into quantum well in semiconductor laser
Author:
Affiliation:
1. Ioffe Physical‐Technical Institute, Russian Academy of SciencesSt. Petersburg194021Russia
2. Virginia Polytechnic Institute and State UniversityBlacksburgVA24061USA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.0605
Reference24 articles.
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3. Saturation of light–current characteristics of high‐power lasers (λ = 1.0–1.1 µm) in pulsed regime;Veselov D.A.;Quantum Electron.,2014
4. Radiation parameters of ridge lasers at high pump currents;Miftakhutdinov D.R.;Quantum Electron.,2008
5. Non‐uniform carrier accumulation in optical confinement layer as ultimate power limitation in ultra‐high‐power broad‐waveguide pulsed InGaAs/GaAs/AlGaAs laser diodes;Ryvkin B.S.;Electron. Lett.,2006
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