Evolution of light‐current characteristic shape in high‐power semiconductor quantum well lasers
Author:
Affiliation:
1. Ioffe InstituteSt. Petersburg194021Russia
2. Virginia Polytechnic Institute and State UniversityBlacksburgVirginia24061USA
Funder
Army Research Office
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2019.0225
Reference19 articles.
1. Two-Valued Characteristics in Semiconductor Quantum Well Lasers
2. Theory of operating characteristics of a semiconductor quantum well laser: Inclusion of global electroneutrality in the structure
3. Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure
4. Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers
5. Two lasing thresholds in semiconductor lasers with a quantum-confined active region
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1. The influences of parabolic potential and magnetism on strongly coupled polaron characteristics within asymmetric Gaussian quantum wells;Modern Physics Letters B;2021-12-01
2. Internal optical loss and light-current characteristic in injection lasers;Journal of Physics: Conference Series;2021-12-01
3. Temperature-induced single-to-double branch transformation of operating characteristics in semiconductor lasers with a low-dimensional active region;Novel In-Plane Semiconductor Lasers XIX;2020-02-24
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