Pulsed gate bias control of GaN HEMTs to improve pulse‐to‐pulse stability in radar applications
Author:
Affiliation:
1. XLIM, Université de Limoges/CNRS123 Ave. A. ThomasLimoges87060France
2. Thalès Air SystemsYmare76520France
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.1052
Reference4 articles.
1. Measured and Simulated Impact of Irregular Radar Pulse Trains on the Pulse-to-Pulse Stability of Microwave Power Amplifiers
2. Cree Inc.:‘CGH40006P: 6 W RF Power GaN HEMT’ http://www.cree.com/~/media/Files/Cree/RF/Data%20Sheets/CGH40006P.pdf accessed March2015
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