Design optimisation of AlGaN/GaN metal insulator semiconductor high electron mobility transistor with high‐K/low‐K compound gate dielectric layer for millimeter‐wave application-Reference-Cited by-同舟云学术

Design optimisation of AlGaN/GaN metal insulator semiconductor high electron mobility transistor with high‐K/low‐K compound gate dielectric layer for millimeter‐wave application

Published:2016-09 Issue:9 Volume:11 Page:503-507
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Du Jiangfeng¹,Hou Zehong¹,Pan Peilin¹,Bai Zhiyuan¹,Yu Qi¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054People's Republic China

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2016.0370

Reference14 articles.

1. Device Delay in GaN Transistors Under High Drain Bias Conditions

2. Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model

3. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

4. Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications

5. Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

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