Street nanotexturing of n‐GaN for enhancing light extraction in GaN LEDs-Reference-Cited by-同舟云学术

Street nanotexturing of n‐GaN for enhancing light extraction in GaN LEDs

Published:2017-07 Issue:7 Volume:12 Page:450-452
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Hsu Chia‐Liang¹,Kumar Amarendra¹,Kashyap Kunal¹,Hou Max Ti‐Kuang²,Yeh Jer‐Liang Andrew³

Affiliation:

1. Institute of Nano Engineering and MicrosystemsNational Tsing Hua UniversityHsinchu30013Taiwan

2. Department of Mechanical EngineeringNational United UniversityMiaoli36003Taiwan

3. Institute of Nano Engineering and MicrosystemsNational Tsing Hua University and the Instrument Technology Research CenterNational Applied Research LaboratoriesHsinchu30013Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2016.0701

Reference14 articles.

1. Design of new traffic lights: Traffic safety and maintenance ease

2. Power management of direct-view LED backlight for liquid crystal display

3. Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars

4. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Light Extraction Efficiency by Self-Masking Technology with Carbonized Photoresist for Light-Emitting Diodes;Micromachines;2023-02-24

2. Effect of different channel spacings for DWDM system using optical amplifiers;National Academy Science Letters;2020-08-13