Effects of body biasing on the low frequency noise of MOSFETs from a 130 nm CMOS technology
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-cds_20040509?crawler=true&mimetype=application/pdf
Reference18 articles.
1. Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI
2. Gate-controlled lateral PNP BJT: characteristics, modeling and circuit applications
3. Performance characteristics of an ultra-low power VCO
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