Compact diamond MOSFET model accounting for PAMDLE applicable down 150 nm node
Author:
Affiliation:
1. Electrical Engineering DepartmentFEI University CenterSão Bernardo do CampoSão PauloBrazil
2. Electrical Engineering DepartmentUniversité catholique de Louvain, UCLLouvain‐la‐NeuveBelgium
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.1229
Reference7 articles.
1. FinFETs and Other Multi-Gate Transistors
2. Silicon-on-Insulator Technology: Materials to VLSI
3. Gimenez S.P. Bellodi M.: Patent Brazil PI0802745–5 A2 2008
4. Diamond MOSFET: An innovative layout to improve performance of ICs
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