1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100°C
Author:
Affiliation:
1. Department of Electronic and Electrical EngineeringUniversity College LondonLondonWC1E 7JEUK
2. Institute for Nanoscience and EngineeringUniversity of ArkansasFayettevilleAR72701USA
Funder
University College London
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.2414
Reference14 articles.
1. Recent progress in lasers on silicon
2. Silicon optical modulators
3. High-performance Ge-on-Si photodetectors
4. Nanolasers grown on silicon
5. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
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