Memory Device Based on a Nano-Granulars and Nano-Worms Structured Mos2 Active Layer: The Origin of Resistive Switching Characteristics

Author:

Sharma Shubham,Kaur Davinder

Publisher

Elsevier BV

Reference37 articles.

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4. Enhanced synaptic characteristics under applied magnetic field in V 2 O 5 /NiMnIn-based switching device for neuromorphic computing;K Kaushlendra;ACS Appl. Electron. Mater,2023

5. Negative differential resistance effect induced by bulk and interface defect states in Pt/CeO 2-x /Pt resistive memory devices;B Wang;Vacuum,2022

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