Competition between Heating and Cooling During Dynamic Self-Heating Degradation of Amorphous Ingazno Thin-Film Transistors-Reference-Cited by-同舟云学术

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Competition between Heating and Cooling During Dynamic Self-Heating Degradation of Amorphous Ingazno Thin-Film Transistors

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Zhou Yuheng,Liu Fayang,Yang Huan,Zhou Xiaoliang,Li Guijun,Zhang Meng,Chen Rongsheng,Zhang Shengdong,Lu Lei

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference26 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;K Nomura;Nature,2004

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rfmagnetron sputtering;H Yabuta;Appl. Phys. Lett,2006

3. Amorphous oxide TFT backplane for large size AMOLED TVs;Y G Mo,2010

4. Oxide semiconductor thinfilm transistors: A review of recent advances;E Fortunato;Adv. Mater,2012

5. High-mobility thin-film transistor with amorphous InGaZnO4channel fabricated by room temperature RFmagnetron sputtering;H Yabuta;Appl. Phys. Lett,2006

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