Codoping of Al and in Atoms in Β -Ga2o3 Semiconductors

Author:

Kim Sunjae,Ryou Heejoong,Moon Jeonghyun,Lee In Gyu,hwang wansik

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference25 articles.

1. Calculation of dopant solubilities and phase diagrams of X-Pb-Se (X= Br, Na) limited to defects with localized charge;S Bajaj;J. Mater. Chem. C,2016

2. An 8-nm-thick Sn-doped polycrystalline ?-Ga 2 O 3 MOSFET with a "normally off" operation;Y Yoon;Appl. Phys. Lett,2021

3. Do, 2.32 kV breakdown voltage lateral ?-Ga 2 O 3 MOSFETs with source-connected field plate;J K Mun;ECS J. Solid State Sci. Technol,2019

4. High responsivity solar-blind metal-semiconductor-metal photodetector based on ?-Ga 2 O 3;J Bae;J. Vac. Sci. Technol., A,2021

5. Single ?-Ga 2 O 3 nanowire based lateral FinFET on Si;S Xu;Appl. Phys. Lett,2022

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