Electronic Synaptic Plasticity and Analog Switching Characteristics in Pt/Tiox/Alox/Altaon/Tan Multilayer Rram for Artificial Synapses-Reference-Cited by-同舟云学术

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Electronic Synaptic Plasticity and Analog Switching Characteristics in Pt/Tiox/Alox/Altaon/Tan Multilayer Rram for Artificial Synapses

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Ismail Muhammad,Mahata Chandreswar,Kim Sungjun

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference54 articles.

1. Resistance switching memories are memristors;L Chua;Applied Physics A: Materials Science and Processing,2011

2. Low-power TiN/Al 2 O 3 /Pt resistive switching device with sub-20 A switching current and gradual resistance modulation;Y Wu;Journal of Applied Physics,2011

3. Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices

4. Oxygen vacancy engineering of TaO x-based resistive memories by Zr doping for improved variability and synaptic behavior;J H Q Palhares;Nanotechnology,2021

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