Effects of Annealing Atmosphere on the Performance of Ga2o3 Films on Si Substrates Deposited by Radio Frequency Magnetron Sputtering-Reference-Cited by-同舟云学术

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Effects of Annealing Atmosphere on the Performance of Ga2o3 Films on Si Substrates Deposited by Radio Frequency Magnetron Sputtering

Published:2023 Issue: Volume: Page:
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Author:

Wang Guodong,Wang Haohan,Chen Tingyu,Wang Yuanyuan,Feng Yanji,Zeng Hua,Guo Lanlan,Liu Xiaolian,Yang Yingli

Publisher

Elsevier BV

Reference31 articles.

1. ?-Ga 2 O 3 for wide-bandgap electronics and optoelectronics;Z Galazka;Semiconductor Science and Technology,2018

2. Solar-blind ultraviolet photodetectors based on homoepitaxial ?-Ga 2 O 3 films;Z Li;Optical Materials,2021

3. Review of gallium-oxide-based solar-blind ultraviolet photodetectors;X Chen;Photonics Research,2019

4. Gallium oxide-based solar-blind ultraviolet photodetectors;X Chen;Semiconductor Science and Technology,2020

5. Heteroepitaxial growth of multidomain Ga 2 O 3 /sapphire(001) thin films deposited using radio frequency magnetron sputtering;H C Kang;Materials Letters,2014

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