Horizontally Aligned Ald-Sno Films Grown on Sio2-Passivated High-K Hfo2 Dielectrics for High-Mobility and Low-Power P-Channel Thin-Film Transistor
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Elsevier BV
Reference45 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;K Nomura;Nature,2004
2. Electronic structures and device applications of transparent oxide semiconductors: What is the real merit of oxide semiconductors?;T Kamiya;Int. J. Appl. Ceram. Technol,2005
3. Origins of high mobility and low operation voltage of amorphous oxide TFTs: Electronic structure, electron transport, defects and doping;T Kamiya;J. Display. Technol,2009
4. Material characteristics and applications of transparent amorphous oxide semiconductors;T Kamiya;NPG Asia Mater,2010
5. Oxide semiconductor thin-film transistors: A review of recent advances;E Fortunato;Adv. Mater,2012
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