Author:
Li Shuai,Yang Shenghai,Lai Yanqing,Deng Chaoyong,Wang Changhong
Subject
General Earth and Planetary Sciences,General Environmental Science
Reference35 articles.
1. Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics;R G Gordon;Chem. Mater,2001
2. Atomic Layer Deposition of HfO 2 Using Alkoxides as Precursors;C Mui;J. Phys. Chem. B,2004
3. 1-nm-capacitanceequivalent-thickness HfO 2 /Al 2 O 3 /InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density;R Suzuki;Appl. Phys. Lett,2012
4. Thickness dependence on crystalline structure and interfacial reactions in HfO 2 films on InP (001) grown by atomic layer deposition;Y S Kang;Appl. Phys. Lett,2010
5. Interfacial Reactions between HfO 2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH 3 Vapor;Y S Kang;Electrochem. Solid-State Lett,2012