Bond Defects in Graphene Created by Ultralow Energy Ion Implantation-Reference-Cited by-同舟云学术

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Bond Defects in Graphene Created by Ultralow Energy Ion Implantation

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Villarreal Renan,Lin Pin-Cheng,Zarkua Zviadi,Bana Harsh,Tsai Hung-Chieh,Auge Manuel,Junge Felix,Hofsäss Hans,Tosi Ezequiel,De Feyter Steven,De Gendt Stefan,Brems Steven,Åhlgren E. Harriet,Pereira Lino M. C.

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference75 articles.

1. Ion implantation of graphene -toward ic compatible technologies;U Bangert;Nano Letters,2013

2. Short-range ordering of ion-implanted nitrogen atoms in sic-graphene;P Willke;Applied Physics Letters,2014

3. Electronic structure modification of ion implanted graphene: The spectroscopic signatures of p-and n-type doping;D Kepaptsoglou;ACS Nano,2015

4. Doping of graphene by low-energy ion beam implantation: structural, electronic, and transport properties;P Willke;Nano Letters,2015

5. Nitrogen-doped graphene and twisted bilayer graphene via hyperthermal ion implantation with depth control;C D Cress;ACS Nano,2016

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