A 500-Khz 206-Mw Programmable High Side Active Gate Driver Chip for Power Mosfets

Author:

Wang Chua-Chin,Jose Oliver Lexter July Alvarez,Kolakaluri Venkata Naveen,Kuo Jui-Min,Chou Mitch Ming-Chi

Publisher

Elsevier BV

Reference11 articles.

1. Driving GaN Power Transistors;D B Ma;Proc. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),2019

2. Study of Power GaN MOSFET Gate Drivers;D Dankov;Proc. 2022 13th National Conference with International Participation (ELECTRONICA),2022

3. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges;E A Jones;IEEE Journal of Emerging and Selected Topics in Power Electronics,2016

4. A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI;H C P Dymond;IEEE Transactions on Power Electronics,2018

5. 33.2 A 600V GaN Active Gate Driver with Dynamic Feedback Delay Compensation Technique Achieving 22.5% Turn-On Energy Saving;J Zhu;Proc. 2021 IEEE International Solid-State Circuits Conference (ISSCC),2021

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