CVD Material Processing. Numerical Analysis Method for Growth Kinetics of Chemical Vapor Deposition of Alumina Using a Non-Isothermal CVD Reactor.
Author:
Affiliation:
1. Department of Chemical Engineering, Kyoto University
2. Department of Materials Process Engineering, Graduate School of Engineering
3. Department of Applied Physics and Chemistry, Fukui University of Technology
Publisher
Society of Chemical Engineers, Japan
Subject
General Chemical Engineering,General Chemistry
Link
http://www.jstage.jst.go.jp/article/kakoronbunshu1975/26/6/26_6_763/_pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dependence of Oxygen Concentration and Temperature on the Growth Rate Distribution of SiO2 Solid Film by Chemical Vapor Deposition in the Hexamethyldisiloxane-oxygen System;Journal of the Japan Institute of Energy;2021-10-20
2. Heat and Mass Transfer Analysis during SiO2 Film Coating by Thermal CVD;Journal of the Japan Institute of Energy;2019-10-20
3. Heat and Mass Transfer Analysis for Coating Process of TiN Thin Film in a Tubular Reactor by Thermal CVD;KAGAKU KOGAKU RONBUNSHU;2014
4. Rate analysis of chemical vapor deposition by use of the thin tubular reactor;Thin Solid Films;2006-03
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