Design of a Multi-Wafer Reactor for Supercritical Fluid Deposition of Cu in Mass Production: (2) Benchmarks for Single- and Multiple-Wafer Reactors
Author:
Affiliation:
1. Department of Materials Engineering, The University of Tokyo
2. Department of Electrical Engineering and Information Systems, The University of Tokyo
3. Department of Mechanical System Engineering, University of Yamanashi
Publisher
Society of Chemical Engineers, Japan
Subject
General Chemical Engineering,General Chemistry
Link
https://www.jstage.jst.go.jp/article/jcej/47/9/47_13we274/_pdf
Reference35 articles.
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3. Dubreuil, O., V. Caubet-Hilloutou, J. Guillan, K. Haxaire, M. Mellier, P. Caubet, P. Vannier, E. Petitprez, D. Bellet and Ph. Normandon; “Characterization and Impact of Reduced Copper Plating Overburden on 45 nm Interconnect Performances,” Microelectron. Eng., 87, 421–425 (2010)
4. Hong, L. S. and M. G. Jeng; “Incubation Time for Chemical Vapor Deposition of Copper from Hexafluoroacetylacetonate–Copper(I)–Vinyltrimethoxysilane,” Appl. Surf. Sci., 161, 149–154 (2000)
5. International Technology Roadmap for Semiconductors (ITRS) 2012 ed.; http://www.itrs.net/ (2012)
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