1. Semiconductor Industry Association “1999 International Technology Roadmap for Semiconductors” (Semiconductor Industry Association San Jose CA 1999).
2. J. J. Watkins T. J. McCarthy U.S. Patent 5 789 027 (1998).
3. Chemical Fluid Deposition: Reactive Deposition of Platinum Metal from Carbon Dioxide Solution
4. Chemical Fluid Deposition: A Hybrid Technique for Low‐Temperature Metallization
5. All Cu depositions were conducted in a dual flange cold-wall reactor in batch mode. The stainless steel reactor has a total volume of 70 ml and contains a resistively heated stage. Precursor and a single substrate were loaded into the reactor. The vessels were sealed purged and charged with CO 2 using a high-pressure syringe pump. The substrate was heated to the desired temperature (typically 200° to 250°C) and the reactor walls were maintained at a lower temperature (typically 60° to 80°C). Film deposition was initiated by the addition of excess of H 2 using a small pressurized manifold (70 ml). The quantity of H 2 admitted into the vessel was calculated using the pressure-drop measured in the manifold.